| PART |
Description |
Maker |
| 2931-150 |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 2729-125 |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 2729-170 |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 1214-370V |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-700P1 |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 2731-100M |
Pulsed Power S-Band (Si)
|
Microsemi
|
| RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1027 |
500W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
| MAPR-001011-850S00 |
L BAND, Si, NPN, RF POWER TRANSISTOR ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2
Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10μs Pulse, 1% Duty
Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10楼矛s Pulse, 1% Duty
|
M/A-COM Technology Solutions, Inc.
|
| HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
|
